features pin description z 20v/6a, r ds(on) <25m @ v gs =4.5v r ds(on) < 34m @ v gs =2.5v z super high dense cell design z reliable and rugged z lead free available (rohs compliant) 1 2 3 45 6 7 8 d s1 s1 g1 g2 s2 s2 d top view tssop-8 n channel mosfet applications z portable equipment and battery powered systems. dual n-channel enhancement mode mosfet FS8205A product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
absolute maximum ratings (t a =25c unless otherwise noted) symbol parameter rating unit v dss drain-source voltage 20 v v gss gate-source voltage 8 i d * continuous drain current v gs =4.5v 6 a i dm * 300 s pulsed drain current 20 i s * diode continuous forward current 1 a t j maximum junction temperature 150 c t stg storage temperature range -55 to 150 p d * maximum power dissipation t a =25c 1.25 w t a =100c 0.5 r ja * thermal resistance-junction to ambient 100 c/w notes *surface mounted on 1in 2 pad area, t 10sec. electrical characteristics (t a =25c unless otherwise noted) symbol parameter test condition 8205a unit min. typ. max. static characteristics bv dss drain-source breakdown voltage v gs =0v, i ds =250 a 20 v i dss zero gate voltage drain current v ds =16v, v gs =0v 1 a t j =85c 30 v gs(th) gate threshold voltage v ds =v gs , i ds =250 a 0.5 0.7 1.5 v i gss gate leakage current v gs =8v, v ds =0v 100 na r ds(on) a drain-source on-state resistance v gs =4.5v, i ds =6a 20 25 m v gs =2.5v, i ds =5.2a 27 34 diode characteristics v sd a diode forward voltage i sd =1a, v gs =0v 0.8 1.3 v t rr reverse recovery time i ds =6a, dl sd /dt=100a/ s 14 ns q rr reverse recovery charge 5 nc dynamic characteristics b r g gate resistance v gs =0v,v ds =0v,f=1mhz 5.5 c iss input capacitance v gs =0v, v ds =10v, frequency=1.0mhz 595 pf c oss output capacitance 140 c rss reverse transfer capacitance 125 t d(on) turn-on delay time v dd =10v, r l =10 , i ds =1a, v gen =4.5v, r g =6 3.5 7 ns t r turn-on rise time 13.5 25 t d(off) turn-off delay time 32 58 t f turn-off fall time 6.6 13 gate charge characteristics b q g total gate charge i ds =6a, dl sd /dt=100a/ s 21 29 nc q gs gate-source charge 1.3 q gd gate-drain charge 3.3 notes a : pulse test ; pulse width 300 s, duty cycle 2%. b : guaranteed by design, not subject to production testing. product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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